semiconductors ZVP4525Z issue 2 - june 2007 250v p-channel enhancement mode mosfet summary v (br)dss =-250v; r ds(on) =14 ; i d =-205ma description this 250v enhancement mode p-channel mosfet provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. applications benefiting from this device include a variety of telecom and general high voltage switching circuits. sot223 and sot23-6 versions are also available. features ? high voltage ? low on-resistance ? fast switching speed ? low gate drive ? low threshold ? complementary n-channel type zvn4525z ? sot89 package applications ? earth recall and dialling switches ? electronic hook switches ? high voltage power mosfet drivers ? telecom call routers ? solid state relays ordering information device reel size (inches) tape width (mm) quantity per reel ZVP4525Zta 7 12mm embossed 1000 units ZVP4525Ztc 13 12mm embossed 4000 units device marking ? p52 d d s g top view sot89 1
ZVP4525Z semiconductors issue 2 - june 2007 thermal resistance parameter symbol value unit junction to ambient (a) r ja 103 c/w junction to ambient (b) r ja 50 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. nb high voltage applications for high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors. absolute maximum ratings parameter symbol limit unit drain-source voltage v dss 250 v gate source voltage v gs 40 v continuous drain current (v gs =10v; ta=25c)(a) (v gs =10v; ta=70c)(a) i d i d -205 -164 ma ma pulsed drain current (c) i dm -1 a continuous source current (body diode) i s -0.75 a pulsed source current (body diode) i sm -1 a power dissipation at t a =25c (a) linear derating factor p d 1.2 9.6 w mw/c operating and storage temperature range t j : t stg -55 to +150 c 2
ZVP4525Z semiconductors issue 2 - june 2007 characteristics 1 10 100 1m 10m 100m 1 single pulse t amb =25c r ds(on) limit 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 0.1 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w) 3
ZVP4525Z semiconductors issue 2 - june 2007 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. static drain-source break down voltage v (br)dss -250 -285 v i d =-1ma, v gs =0v zero gate voltage drain current i dss -30 -500 na v ds =-250v, v gs =0v gate-body leakage i gss 1 100 na v gs = 40v, v ds =0v gate-source threshold voltage v gs(th) -0.8 -1.5 -2.0 v i d =-1ma, v ds =v gs static drain-source on-state resistance (1) r ds(on) 10 13 14 18 v gs =-10v, i d =-200ma v gs =-3.5v, i d =-100ma forward transconductance (3) g fs 80 200 ms v ds =-10v,i d =-0.15a dynamic (3) input capacitance c iss 73 pf v ds =-25 v, v gs =0v, f=1mhz output capacitance c oss 12.8 pf reverse transfer capacitance c rss 3.91 pf switching (2) (3) turn-on delay time t d(on) 1.53 ns v dd =-30v, i d =-200m a r g =50 ,v gs =-10v (refer to test circuit) rise time t r 3.78 ns turn-off delay time t d(off) 17.5 ns fall time t f 7.85 ns total gate charge q g 2.45 3.45 nc v ds =-25v,v gs =-10v, i d =-200ma(refer to test circuit) gate-source charge q gs 0.22 0.31 nc gate drain charge q gd 0.45 0.63 nc source-drain diode diode forward voltage (1) v sd 0.97 v t j =25c, i s =-200ma, v gs =0v reverse recovery time (3) t rr 205 290 ns t j =25c, i f =-200ma, di/dt=100a/ s reverse recovery charge (3) q rr 21 29 nc (1) measured under pulsed conditions. width=300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZVP4525Z semiconductors issue 2 - june 2007 typical characteristics 0 5 10 15 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 0.0 0.2 0.4 0.6 2345 0.1 1 -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 4v 5v 10v 3.5v 2.5v 2v output characteristics t=25c 3v v gs -i d drain current (a) -v ds drain-source voltage (v) 2v 2.5v 4v 5v 10v 3v output characteristics t = 150c v gs 3.5v -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t=25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs =10v i d =200ma v gs(th) v gs =v ds i d =1ma normalised r ds(on) and v gs(th) tj junction temperature (c) 5v 2v 4v 10v 3.5v on-resistance v drain current t = 25c 3v 2.5v v gs r ds(on) drain-source on-resistance (w) -i d drain current (a) t = 150c t=25c source-drain diode forward voltage -v ds source-drain voltage (v) -i sd reverse drain current (a)
ZVP4525Z semiconductors issue 2 - june 2007 characteristics 0.1 1 10 0 25 50 75 100 125 150 175 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) v ds - drain - source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 i d = 200ma v ds = 25v gate-sourcevoltagevgatecharge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v)
ZVP4525Z semiconductors issue 2 - june 2007 test circuits
ZVP4525Z semiconductors 52 issue 2 - june 2007 definitions product change zetex semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. customers are solely responsible for obtaining the latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as design ideas. it is the responsibility of the user to ensure that the circuit is fit for the u ser's application and meets with the user's requirements. no representation or warranty is given and no liability whatsoever is assumed by zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the us e of these circuit applications, under any circumstances. life support zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of zetex semiconductors plc. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. reproduction the product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. terms and conditions all products are sold subjects to zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. for the latest information on technology, delivery terms and conditions and prices, please contact your nearest zetex sales office. quality of product zetex is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts directly from zetex semiconductors or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork zetex semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitable precautions should be taken when handling and transporting devices. the possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. the extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. devices suspected of being affected should be replaced. green compliance zetex semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. all zetex components are compliant with the rohs directive, and through this it is supporting its customers in their compliance with weee and elv directives. product status key: "preview"future device intended for production at some point. samples may be available "active"product status recommended for new designs "last time buy (ltb)"device will be discontinued and last time buy period and delivery is in effect "not recommended for new designs"device is still in production to support existing designs and production "obsolete"production has been discontinued datasheet status key: "draft version"this term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "provisional version"this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specifications may occur, at any time and without notice. "issue"this term denotes an issued datasheet containing finalized specifications. however, changes to specifications may occur, at any time and without notice.
ZVP4525Z semiconductors issue 2 - june 2007 53 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com ? zetex semiconductors plc 2007 package dimensions pad layout details h a d b k g n l f c dim millimetres inches min max min max a 4.40 4.60 0.173 0.181 b 3.75 4.25 0.150 0.167 c 1.40 1.60 0.550 0.630 d - 2.60 - 0.102 f 0.28 0.45 0.011 0.018 g 0.38 0.55 0.015 0.022 h 1.50 1.80 0.060 0.072 k 2.60 2.85 0.102 0.112 l 2.90 3.10 0.114 0.122 n 1.40 1.60 0.055 0.063 1.2 1.0 1.2 3.2 1.5 4.0 2.4 sot89 pattern. minimum pad size (dimensions in mm)
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